Energy gaps and optical properties for the ternary semiconductor alloys InxGa1-xN

Abstract

The aim of this work is to study the electronic, optical and dielectric properties and the effective mass of the ternary semiconductor alloy InxGa1-xSb in the zinc blende structure. These alloys have an important interest for the design of optoelectronic devices. The calculations are mainly based on the empirical pseudo-potential approach combined with the VCA virtual crystal approximation. Our results have shown that by varying the concentration of indium, the InxGa1-x N alloy presents a direct gap for the interval (0 ≤ x ≤1). This work could provide us with various possibilities for obtaining refractive indices and dielectric constants by varying the composition x. Our results are in good agreement with other experimental and theoretical results.